Experimental observation of conductance transients inAl/SiNx:H/Simetal-insulator-semiconductor structures
作者:
S. Duen˜as,
R. Pelaez,
E. Castan,
R. Pinacho,
L. Quintanilla,
J. Barbolla,
I. Martil,
G. Gonzalez-Diaz,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 6
页码: 826-828
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119658
出版商: AIP
数据来源: AIP
摘要:
Room temperature conductance transients in theSiNx:H/Siinterface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. ©1997 American Institute of Physics.
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