Multistable mode locking of InGaAsP semiconductor lasers
作者:
M. Kuznetsov,
D. Z. Tsang,
J. N. Walpole,
Z. L. Liau,
E. P. Ippen,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 12
页码: 895-897
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98847
出版商: AIP
数据来源: AIP
摘要:
We have investigated the pulsation behavior of InGaAsP semiconductor lasers with a proton‐bombarded segment. These lasers emit picosecond (30–70 ps) pulses at gigahertz (0.6–3.0 GHz) rates. An antireflection‐coated diode in an external cavity is passively mode locked and multistable; as many as four co‐existing states are observed. Interlocking hysteresis loops are observed in the pulsation frequency, pulse width, and output power as functions of the bias current. A delayed feedback model explains qualitative features of the multistable mode locking. To our knowledge this is the first report of multistability of laser pulsation.
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