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Variable I–V characteristics method applied to model the electrical behavior of an irradiated P–N junction. Extension to the junction in an irradiated transistor

 

作者: C. Sudre,   F. Pelanchon,  

 

期刊: Radiation Effects and Defects in Solids  (Taylor Available online 1996)
卷期: Volume 138, issue 1-2  

页码: 17-28

 

ISSN:1042-0150

 

年代: 1996

 

DOI:10.1080/10420159608211505

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The electrical behavior of a diode, either reverse or forward biased, under a radiation pulse, is considered. The variations of the current produced by the diode are explained by the consideration of variable I-V characteristics, showing the different diode behaviors according to the working mode. This approach is then applied to explain some electrical properties of an irradiated transistor.

 

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