Variable I–V characteristics method applied to model the electrical behavior of an irradiated P–N junction. Extension to the junction in an irradiated transistor
作者:
C. Sudre,
F. Pelanchon,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1996)
卷期:
Volume 138,
issue 1-2
页码: 17-28
ISSN:1042-0150
年代: 1996
DOI:10.1080/10420159608211505
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The electrical behavior of a diode, either reverse or forward biased, under a radiation pulse, is considered. The variations of the current produced by the diode are explained by the consideration of variable I-V characteristics, showing the different diode behaviors according to the working mode. This approach is then applied to explain some electrical properties of an irradiated transistor.
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