Reactive rf planar magnetron sputtering has been used at substrate temperatures below 300 °C to deposit highly oriented piezoelectric AlN films on silicon for surface acoustic wave device applications. The substrates were (100)‐oriented,n‐type silicon with and without a thermally grown oxide. Several new AlM‐on‐silicon surface acoustic wave devices were fabricated and tested. The devices reported herein include two‐port delay lines, degenerate monolithic convolvers, and two‐port surface acoustic wave resonators utilizing metal strip reflector arrays.