Plasma oxidation of GaAs
作者:
R. P. H. Chang,
A. K. Sinha,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 1
页码: 56-58
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.88872
出版商: AIP
数据来源: AIP
摘要:
A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one‐step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2. They have a gallium‐to‐arsenic ratio of nearly one. The electrical properties (I‐V,C‐V) of the films are such that this process may be useful in device fabrication.
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