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Reverse current‐voltage characteristics of indium tin oxide/silicon solar cells under illumination

 

作者: P. Smith,   R. Singh,   J. DuBow,  

 

期刊: Journal of Applied Physics  (AIP Available online 1980)
卷期: Volume 51, issue 4  

页码: 2164-2166

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.327890

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Recently, Rodriquez and co‐workers [J. Appl. Phys. 50, 6011 (1979)] reported anomalous photocurrent in reverse‐biased tin oxide/silicon solar cells. We have observed no anomalous photocurrent in our indium tin oxide/silicon semiconductor‐insulator‐semiconductor (SIS) solar cells. In this paper we have offered a possible explanation of why the authors of the above referred paper have observed anomalous photocurrent in tin oxide/silicon solar cells whereas no such effect has been observed in our indium tin oxide/silicon SIS solar cells.

 

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