Reverse current‐voltage characteristics of indium tin oxide/silicon solar cells under illumination
作者:
P. Smith,
R. Singh,
J. DuBow,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 4
页码: 2164-2166
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327890
出版商: AIP
数据来源: AIP
摘要:
Recently, Rodriquez and co‐workers [J. Appl. Phys. 50, 6011 (1979)] reported anomalous photocurrent in reverse‐biased tin oxide/silicon solar cells. We have observed no anomalous photocurrent in our indium tin oxide/silicon semiconductor‐insulator‐semiconductor (SIS) solar cells. In this paper we have offered a possible explanation of why the authors of the above referred paper have observed anomalous photocurrent in tin oxide/silicon solar cells whereas no such effect has been observed in our indium tin oxide/silicon SIS solar cells.
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