Quenching of porous silicon photoluminescence by deposition of metal adsorbates
作者:
D. Andsager,
J. Hilliard,
J. M. Hetrick,
L. H. AbuHassan,
M. Plisch,
M. H. Nayfeh,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 7
页码: 4783-4785
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354350
出版商: AIP
数据来源: AIP
摘要:
Various metals were deposited on luminescent porous silicon (PS) by immersion in metal ion solutions and by evaporation. The photoluminescence (PL) was quenched upon immersion in ionic solutions of Cu, Ag, and Au but not noticeably quenched in other ionic solutions. Evaporation of 100 A˚ of Cu or 110 A˚ of Au was not observed to quench PL. Auger electron spectroscopy performed on samples quenched and then immediately removed from solution showed a metallic concentration in the PS layer of order 10 at.%, but persisting to a depth of order 3000 A˚.
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