Symmetry and electronic properties of the oxygen thermal donor in pulled silicon
作者:
P. M. Henry,
J. W. Farmer,
J. M. Meese,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 4
页码: 454-456
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95213
出版商: AIP
数据来源: AIP
摘要:
Oxygen is the dominant impurity in pulled silicon. At 450 °C, thermal donors form in oxygen rich silicon. Using deep level transient spectroscopy, this donor is found to have an energy level of 0.142 eV below the conduction band at zero electric field, exhibiting behavior consistent with the Poole–Frenkel field assisted electron emission process. Using deep level transient spectroscopy in conjunction with calibrated uniaxial stress, we have determined the symmetry of the neutral 450 °C oxygen donor complex to beD2d. Possible models for the oxygen donor complex are presented which are consistent with the observed symmetry and with previous experiments.
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