Thermally stable ohmic contacts ton‐type GaAs. VII. Addition of Ge or Si to NiInW ohmic contacts
作者:
Masanori Murakami,
W. H. Price,
M. Norcott,
P.‐E. Hallali,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 5
页码: 2468-2474
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346508
出版商: AIP
数据来源: AIP
摘要:
The effects of Si or Ge addition to NiInW ohmic contacts on their electrical behavior were studied, where the samples were prepared by evaporating Ni(Si) or Ni(Ge) pellets with In and W and annealed by a rapid thermal annealing method. An addition of Si affected the contact resistances of NiInW contacts: the resistances decreased with increasing the Si concentrations in the Ni(Si) pellets and the lowest value of ∼0.1 &OHgr; mm was obtained in the contact prepared with the Ni‐5 at. % Si pellets after annealing at temperatures around 800 °C. The contact resistances did not deteriorate during isothermal annealing at 400 °C for more than 100 h, far exceeding process requirements for self‐aligned GaAs metal‐semiconductor field‐effect‐transistor devices. In addition, the contacts were compatible with TiAlCu interconnects which have been widely used in the current Si process. Furthermore, the addition of Si to the NiInW contacts eliminated an annealing step for activation of implanted dopants and low resistance (∼0.2 &OHgr; mm) contacts were fabricated for the first time by a ‘‘one‐step’’ anneal. In contrast, an addition of Ge to the NiInW contacts did not significantly reduce the contact resistances.
点击下载:
PDF
(758KB)
返 回