We report on theinsitupreparation and characterization of thin YBa2Cu3O7−&dgr;films on various substrates. The films were grown by electron‐beam coevaporation of the pure metals Y, Ba, and Cu. A pressure stage is used to obtain high partial O2pressure close to the substrate and low pressure in the main vacuum system.Insituresistance measurements were performed to investigate growth dynamics during film formation, and temperature dependence during the cool down fromT≊1000 K toT≤Tc. The films were analyzed byR(T), ac susceptibility, x‐ray diffraction, and critical transport current measurements.