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Impurity scattering limited momentum relaxation time in a quantum well wire

 

作者: Jerry W. Brown,   Harold N. Spector,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 2  

页码: 453-458

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583403

 

出版商: American Vacuum Society

 

关键词: CHARGED−PARTICLE TRANSPORT THEORY;SCATTERING;RELAXATION;IMPURITIES;QUANTUM WELL STRUCTURES;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;CHARGE CARRIERS;RELAXATION TIME;CHARGED−PARTICLE TRANSPORT;GaAs;(Al,Ga)As

 

数据来源: AIP

 

摘要:

The ionized impurity limited momentum relaxation time for carrier scattering within a quantum well wire is calculated for both infinite and finite confining wells models. The transverse part of the carrier wave function is taken to be a Bessel function. For a background impurity distribution, the scattering frequency increases with increasing well depth. For remote ionized impurities or a tube of impurities the scattering frequency decreases with increasing well depth. We assume GaAs/Ga1−xAlxAs for the material of the quantum well wire structure.

 

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