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Correlation between the photoreflectance impurity peak in semi‐insulating GaAs and the bulk acceptor concentration

 

作者: Steven K. Brierley,   Deborah S. Lehr,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 8  

页码: 3878-3880

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.344988

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have measured the strength of the first‐derivative peak observed below the band gap in photoreflectance spectra of semi‐insulating GaAs and found that it is correlated with the bulk residual acceptor concentration. The apparent energy separation of the impurity peak is not fixed, but varies from sample to sample.

 

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