The dielectric properties of (Ta2O5)1−x(SiO2)xpolycrystalline ceramics for 0.0≤x≤0.20 are reported. Measurements were made at 1 MHz and temperature between −40 and +100 °C. The dielectric properties are not very sensitive to SiO2content. A moderate enhancement of the dielectric constant is found, from −30 for pure Ta2O5to ∼45 atx&bartil;0.10. The temperature coefficient of dielectric constant in the vicinity of room temperature decreases from ∼200 ppm/°C for Ta2O5to ∼75 ppm/°C forx=0.14. ©1996 American Institute of Physics.