首页   按字顺浏览 期刊浏览 卷期浏览 Electrical characteristics of GaAs grown from the melt in a reduced‐gravity envi...
Electrical characteristics of GaAs grown from the melt in a reduced‐gravity environment

 

作者: Z. G. Wang,   C. J. Li,   F. N. Cao,   Z. W. Shi,   B. J. Zhou,   X. R. Zhong,   S. K. Wan,   S. D. Xu,   L. Y. Lin,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 3  

页码: 1521-1524

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345662

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The electrical properties and structural defects of Te‐doped GaAs grown in space have been investigated by using various techniques. The experimental results confirm that the microgravity conditions offer some advantages for the melt growth of III‐V compound semiconductor materials; improvements of homogeneity and perfection as well as purity of the space GaAs single crystal are expected.

 

点击下载:  PDF (441KB)



返 回