Values for the electron minority‐carrier lifetime &tgr;nin Hg0.68Cd0.32Te photodiodes were independently determined by two indirect techniques. Measurements of the junction resistance under zero bias at 210 K yield &tgr;n=2.3×10−7sec, and diffusion length measurements give &tgr;n=2.9×10−7sec. These results are in agreement with our calculations for radiative lifetime inp‐type Hg0.68Cd0.32Te. Similar measurements on gold‐doped material indicate a lifetime shorter by almost three orders of magnitude, and it is suggested that this is due to recombination associated with Shockley‐Read centers.