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Growth rate and composition calibration of III/V materials on GaAs and InP using reflection high‐energy electron diffraction oscillations

 

作者: R. F. Kopf,   J. M. Kuo,   M. Ohring,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 4  

页码: 1920-1923

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585380

 

出版商: American Vacuum Society

 

关键词: INDIUM ARSENIDES;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;INDIUM PHOSPHIDES;GROWTH;CHEMICAL COMPOSITION;RHEED;OSCILLATIONS;EPITAXY;(InGa)As;(InAl)As

 

数据来源: AIP

 

摘要:

The use of reflection high‐energy electron diffraction oscillations to obtain lattice‐matched In0.53Ga0.47As and In0.52Al0.48As on InP is described. This method has also been extended to the growth of strained InyGa1−yAs and InxAl1−xAs on InP as well as that of quaternary In1−x−yGaxAlyAs compositions, lattice‐matched in InP.

 

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