Investigation of Implanted Semiconductors by Nuclear Spectroscopie Methods
作者:
S. Unterricker,
期刊:
Isotopenpraxis Isotopes in Environmental and Health Studies
(Taylor Available online 1989)
卷期:
Volume 25,
issue 6
页码: 221-226
ISSN:0021-1915
年代: 1989
DOI:10.1080/10256018908624108
出版商: Taylor & Francis Group
关键词: bond angle;coordination number;crystal structure;electron channeling;ion implantation;moessbauer effect;perturbed angular correlation;physical radiation effects;radioisotopes;semiconductor materials
数据来源: Taylor
摘要:
By help of nuclear spectroscopic methods the microscopic structure of the environments of implanted atoms can be studied. Moessbauer-effect investigations of implanted semiconductors give a dominating substitution of implanted probes and in most cases the observed radiation damage is relatively small. On the other side experiments with perturbed angular correlations (TDPAC) in comparable systems clearly proof that after implantation a high degree of radiation damage exists. Electron channelling investigations support the statements of the Moessbauer experiments. A model for the structure of radiation damaged zones where the tetrahedral coordination of the atoms is prefered strongly and where the bond angles are distributed in a random manner around the ideal values is able to interprete the measured results satisfactorily.
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