Cross‐sectional atomic force microscopy of semiconductor nanostructures
作者:
B. Dwir,
F. Reinhardt,
E. Kapon,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 8
页码: 4939-4942
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359783
出版商: AIP
数据来源: AIP
摘要:
We performed imaging of semiconductor nanostructures (quantum wells and quantum wires) by atomic force microscopy of the cleaved edge of the samples under ambient conditions. Selective etching was used to enhance the composition contrast of the semiconductor heterostructure layers, and a procedure for retrieving the nanostructure dimensions from the scanned image is presented. The simple sample preparation and the relatively large (up to ∼100×100 &mgr;m2) imaged areas offer advantages over more conventional nanometer resolution techniques such as transmission electron microscopy. ©1995 American Institute of Physics.
点击下载:
PDF
(585KB)
返 回