Study of the Anisotropy of Radiation Damage Rates inn‐Type Silicon
作者:
P. L. F. Hemment,
P. R. C. Stevens,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 12
页码: 4893-4901
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657310
出版商: AIP
数据来源: AIP
摘要:
Consideration of the factors influencing electron radiation damage has led to the development of a computer program to predict damage rates as a function of electron beam energy and crystal orientation with respect to the beam. Experimental results using low‐energy electrons (in the range 100–400 keV) are presented, which show the carrier removal rate as a function of sample orientation and electron beam energy. These measurements supplement the earlier results of Haddad and Banbury. Comparison of the calculated and experimental results enables us to make suggestions about the form of the displacement energy as a function of direction in the crystal, and to determine an effective threshold energy of 22 eV. Our model of the displacement‐energy profile is justified in a simple manner from crystallographic considerations.
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