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Three‐Dimensional X‐Ray Topographic Studies of Internal Dislocation Sources in Silicon

 

作者: A. Authier,   A. R. Lang,  

 

期刊: Journal of Applied Physics  （AIP Available online 1964）
卷期: Volume 35, issue 6  

页码: 1956-1959

 

ISSN:0021-8979

 

年代: 1964

 

DOI:10.1063/1.1713778

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Stereo pairs of x‐ray projection topographs have been used to elucidate the configuration of dislocations in a silicon bar lightly deformed at about 900°C. Dislocation reactions and interactions associated with a ten‐turn Frank‐Read spiral are described.

 

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