Heat transport properties of semiconductors under nonuniform stress
作者:
K. Aflatooni,
A. Nathan,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 9
页码: 1110-1111
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113828
出版商: AIP
数据来源: AIP
摘要:
The effects of an inhomogeneous stress field on the heat transport in semiconductors are qualitatively studied. Stress‐induced spatial variations in lattice constant results in changes in phonon frequency and hence, in the phonon distribution leading to diffusion of phonons which constitutes heat flux at the macroscopic level. It is also found that this leads to a fractional change in thermal conductivity that is linear with the local stress tensor. ©1995 American Institute of Physics.
点击下载:
PDF
(60KB)
返 回