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Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

 

作者: E. R. Brown,   J. R. So¨derstro¨m,   C. D. Parker,   L. J. Mahoney,   K. M. Molvar,   T. C. McGill,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 20  

页码: 2291-2293

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104902

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature.

 

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