Band gap bowing and refractive index spectra of polycrystallineAlxIn1−xNfilms deposited by sputtering
作者:
T. Peng,
J. Piprek,
G. Qiu,
J. O. Olowolafe,
K. M. Unruh,
C. P. Swann,
E. F. Schubert,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 17
页码: 2439-2441
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120112
出版商: AIP
数据来源: AIP
摘要:
The AlGaInN semiconductor system is currently of high interest for applications in blue light emitting devices. AlInN is a prospective material for lattice matched confinement layers. We measure the refractive index as well as the band gap across the entire compositional range of high-quality polycrystalline AlInN samples. Strong band gap bowing is observed. ©1997 American Institute of Physics.
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