The results of an experimental apparatus and procedure using noise measurement techniques to identify conduction mechanisms in resonant tunneling diodes due to defect‐assisted tunneling are presented. The activation energies and capture cross sections of the traps are determined for each of three distinct levels detected. These values are in good agreement between the forward bias and inverted bias cases. A conjecture is made as to the physical location of the traps. This interpretation yields qualitative behavior consistent with the known bias and temperature dependence of the experimental results.