Na/carbon‐rich β‐SiC(100) surface: Initial interface formation and metallization
作者:
F. Semond,
P. Soukiassian,
P. S. Mangat,
L. di Cioccio,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 4
页码: 1591-1596
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.587862
出版商: American Vacuum Society
关键词: ADSORBATES;SODIUM;SILICON CARBIDES;INTERFACE STRUCTURE;AMBIENT TEMPERATURE;CHEMICAL BONDS;ELECTRONIC STRUCTURE;PLASMONS;PHOTOEMISSION;Na;SiC
数据来源: AIP
摘要:
We investigate the room temperature interface formation of the Na/carbon‐rich β‐SiC(100) surface by core level and valence band photoemission spectroscopy using synchrotron radiation. The deposition of a Na layer at saturation coverage results in surface metallization as evident from the presence of plasmon loss features at core levels, and from a Fermi edge building‐up in the valence band. Furthermore, large chemical shifts at both C 1sand Si 2pcore level indicate reactive interface formation and surface disruption with significant adsorbate–substrate charge transfer. The Na–Si bond establishment leads to subsequent breaking of the C–Si bonds leaving additional C atoms on the surface as carbon/graphite clusters. Exposure of the Na/β‐SiC(100) interface to a small amount of oxygen results in the removal of surface metallization.
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