Deep traps in the boron extended tail region of ion implanted 6H–SiCpnjunctions formed during annealing have been studied using deep level transient spectroscopy. Dramatically high concentrations of∼1016 cm−3of theDcenter have been observed through the unusual appearance of minority peaks in the majority carrier spectra. No evidence is found for any shallow boron acceptor in this region, but an induced hole trapIhatEV+0.46 eVis found under cold implantation conditions. These results support the picture of the extended tail, rich in boron-vacancy complexes such as theDcenter, which forms as a result of vacancy enhanced indiffusion. The dominance of the electrically activeDcenter in the depletion layer of the technologically important SiCpnjunction diode suggests the need for further research in this area. ©1998 American Institute of Physics.