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Electron beam sublimation deposited and lifted‐off carbon mask for InP reactive ion etching

 

作者: Katerina Y. Hur,   Thomas P. McKenna,   Thomas E. Kazior,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 5  

页码: 3046-3047

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587557

 

出版商: American Vacuum Society

 

关键词: INDIUM PHOSPHIDES;BINARY COMPOUNDS;ETCHING;ION BEAMS;MASKING;CARBON;USES;ENERGY BEAM DEPOSITION FILMS;InP;C

 

数据来源: AIP

 

摘要:

Carbon thin films produced by electron beam sublimation deposition and solvent liftoff have been used as reactive ion etch masks for etching deep trenches on InP. Using a Cl2:HBr:BCl3:Ar‐based plasma in a reactive ion etcher, 15‐μm‐wide trenches were etched to a depth of 18 μm. The etch rate selectivity between InP and the carbon mask is better than 100:1. The resulting sidewall profiles are highly anisotropic due to the low sputter rate of carbon.

 

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