Quenching from 875°C of doped and high purity germanium produces several deep level defects not previously reported. Subsequent γ-irradiation of this material provides evidence that most of these defects are possibly related to oxygen dispersed throughout the samples during the quench. Isochronal annealing data are given for two of the defects(Ec−0.36 eV,Ev+039 eV), and exposure to a hydrogen plasma for 2 hr at 250°C is shown to effectively neutralize deep donor levels (Ec−0.35 eV,Ec-036 eV) to a depth of ∼50 μm.