Anomalous Barrier Capacitance inp‐nJunctions of InSb
作者:
C. A. Lee,
G. Kaminsky,
期刊:
Journal of Applied Physics
(AIP Available online 1960)
卷期:
Volume 31,
issue 10
页码: 1717-1719
ISSN:0021-8979
年代: 1960
DOI:10.1063/1.1735432
出版商: AIP
数据来源: AIP
摘要:
Reverse bias transition capacitance measurements on alloy diodes of InSb at 78°K give values a factor of three times those calculated from normal diode theory. This result is in contrast to the reasonable agreement obtained for diodes of germanium and gallium arsenide in a comparable doping range. The experimental techniques are critically reviewed and an attempt made to assess the implications of the results.
点击下载:
PDF
(244KB)
返 回