Infrared evidence for inhomogeneity in SiO2films grown by plasma assisted oxidation of Si
作者:
C. Martinet,
R. A. B. Devine,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 18
页码: 2696-2698
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114296
出版商: AIP
数据来源: AIP
摘要:
The longitudinal optic vibrational mode associated with the asymmetric stretch of the bridging oxygen atom has been studied in amorphous SiO2grown by plasma assisted oxidation of Si. In films ≤70 nm thick the mode is observed displaced by −6 cm−1with respect to the bulk value (1256 cm−1). Deconvolution of the spectra combined with chemical etchback of the films shows that they are inhomogeneous, the peak shift increasing to −12 cm−1near the Si/SiO2interface in films thicker than ∼20 nm. ©1995 American Institute of Physics.
点击下载:
PDF
(99KB)
返 回