Reply to ’’Comment on ’A unified explanation for secondary ion yields’ and ’Mechanism of the SIMS matrix effect’’’
作者:
P. Williams,
V. R. Deline,
C. A. Evans,
W. Katz,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 1
页码: 530-532
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328452
出版商: AIP
数据来源: AIP
摘要:
Comments made in the preceding paper are critically discussed. It is argued that conclusions reached in our earlier papers were conservative and justified within our experimental accuracy. Negative‐ion yields under cesium bombardment scale with surface cesium concentration and electron affinity in a manner analogous to the scaling of positive‐ion yields with surface oxygen concentration and ionization potential. Fluorine is shown to be an exception, due probably to saturation effects.
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