Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation
作者:
C. G. Tuppen,
M. R. Taylor,
P. L. F. Hemment,
R. P. Arrowsmith,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 1
页码: 57-59
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95009
出版商: AIP
数据来源: AIP
摘要:
The effects of implantation temperature (Ti) on the chemical and physical structure of annealed high‐dose oxygen ion implanted layers were investigated by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). At lowTi(∼400 °C) the buried oxide is bordered by layers of polycrystalline silicon (polysilicon) which, in the top silicon layer, is separated from damaged single crystal Si by a thin band of discontinuous oxide. These polysilicon layers are formed from amorphous regions during high‐temperature anneals. At highTi(∼500 °C) polysilicon was not observed.
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