High-lying metastable states of Si donors in GaAs under magnetic field
作者:
Zhanghai Chen,
Zhonghui Chen,
P. L. Liu,
G. L. Shi,
C. M. Hu,
X. H. Shi,
S. C. Shen,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 9
页码: 6183-6185
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364402
出版商: AIP
数据来源: AIP
摘要:
Fourier transform infrared photoconductivity spectra of Si donors in GaAs under magnetic field are presented in this paper. Four new spectral lines corresponding to the transitions from hydrogen-like ground state to the metastable states (510), (610), (710), and (810) under nonzero magnetic field were observed. The variational calculation model proposed by Barmby &etal; was applied to the high-lying metastable states. The experimental data of the transition energies agree well with the variational results under high magnetic field and below the resonant polaron region. Deviations due to omitting the bound Landau continuum coupling in the trial wave function were found in the comparison at the low field region for the metastable states with higher Landau index. The ionization energies of the high-lying metastable states were also determined. ©1997 American Institute of Physics.
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