Order domain boundaries in ion beam synthesized semiconducting FeSi2layers
作者:
Z. Yang,
G. Shao,
K. P. Homewood,
K. J. Reeson,
M. S. Finney,
M. Harry,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 5
页码: 667-669
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115197
出版商: AIP
数据来源: AIP
摘要:
The internal streaking contrast within ion beam synthesized &bgr;‐FeSi2(&bgr;) grains has been studied. The results show that this internal streaking contrast is caused by the interfaces between coexistent &bgr; order domains (ODs) which are 90° oriented to one another around [200]&bgr;. The interface between adjacent ODs is (200)&bgr;. The mechanism for the formation of order domain boundaries (ODBs) is attributed to the impingements of separately nucleated growing silicide nuclei during the process of ion implantation and subsequent thermal annealing. ©1995 American Institute of Physics.
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