Design and performance of trapatt devices, oscillators and amplifiers
作者:
C.H.Oxley,
A.M.Howard,
J.J.Purcell,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1976)
卷期:
Volume 1,
issue 1
页码: 24-30
年代: 1976
DOI:10.1049/ij-ssed.1976.0004
出版商: IEE
数据来源: IET
摘要:
Siliconp+-nn+trapatt diodes have been fabricated by integral-heat-sink (t.h.s.) technology. The gradedp+njunction has been formed by two methods; by deposition and by a low energy implantation, both of which were followed by a drive-in period. Oscillator efficiencies of 55% in L-band, and 35% in X-band were recorded. R.F. peak powers of up to 15 W in X-band have been observed. J-band operation has been obtained by 2nd-harmonic extraction, giving efficiencies of 13% to 16 GHz. Low steady-state thermal impedance has enabled operation with mean powers in excess of 1 W in X-band. Diodes with improved transient thermal impedance have enabled operation to be extended beyond 5 μs pulsewidth. Coaxial amplifier circuits produced small-signal gains of 9 dB and added-power efficiencies of 25% at 9 GHz. Large-signal gains of 4 dB with 1 dB bandwidths of 500 MHz with r.f. peak powers of over 12 W have been obtained. Amplifiers have been operated with a 1 dB variation in gain over a temperature range of 50 deg C.
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