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Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001)

 

作者: Todd Holden,   Fred H. Pollak,   J. L. Freeouf,   D. McInturff,   J. L. Gray,   M. Lundstrom,   J. M. Woodall,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 9  

页码: 1107-1109

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118499

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have evaluated an “effective depletion width” of ⩽45 Å and the sign(n-type/upward band bending) of the near surface electric field in low-temperature grown GaAs (001) using the optical method of reflection anisotropy spectroscopy in the vicinity of the spin-orbit splitE1, E1+&Dgr;1optical features. Our results provide evidence that surface Fermi level pinning occurs for air exposed (001) surfaces of undoped low temperature grown GaAs. ©1997 American Institute of Physics.

 

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