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Hydrogenated amorphous silicon transverse junction solar cell

 

作者: M. A. Kroon,   R. A. C. M. M. van Swaaij,   M. Zeman,   V. I. Kuznetsov,   J. W. Metselaar,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 2  

页码: 209-210

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.120687

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this letter, we introduce a new thin film solar cell design on amorphous silicon, called the transverse junction solar cell. In this concept, thep-i-njunction is formed perpendicular to the surface. With conventional deposition and silicon device processing techniques test cells have been made with a conversion efficiency up to5.2&percent;±1.4&percent;under standard AM1.5 illumination. ©1998 American Institute of Physics.

 

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