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Lead telluride‐germanium heterojunction properties

 

作者: P. Perfetti,   F. Cerrina,   C. Coluzza,   G. Margaritondo,  

 

期刊: Journal of Applied Physics  （AIP Available online 1974）
卷期: Volume 45, issue 2  

页码: 972-973

 

ISSN:0021-8979

 

年代: 1974

 

DOI:10.1063/1.1663357

 

出版商: AIP

 

数据来源: AIP

 

摘要:

PbTe&sngbnd;Gep‐nheterojunctions were formed by evaporating PbTe layers on Ge substrates kept at constant temperature. The electrical characteristics are discussed, indicating that the static potential drop is essentially supported by the Ge side in all diodes. This causes a peaking of the spectral photoresponse near the Ge energy gap.

 

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