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EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAsp‐nJUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY

 

作者: H. Rupprecht,   J. M. Woodall,   G. D. Pettit,  

 

期刊: Applied Physics Letters  （AIP Available online 1967）
卷期: Volume 11, issue 3  

页码: 81-83

 

ISSN:0003-6951

 

年代: 1967

 

DOI:10.1063/1.1755045

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Efficient visible light emitting diodes have been fabricated from Ga1‐xAlxAs. Epitaxial layers were obtained by a modified solution growth technique. External quantum efficiencies of up to 3.3% have been measured at room temperature on diodes, which had their emission at 1.70 eV. The switching time for the light emission at 300°K was measured to be 60 nsec.

 

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