New degrees of freedom in resonant tunneling heterostructure devices
作者:
D. D. Coon,
E. Sorar,
K. M. S. V. Bandara,
N. Urban,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 8
页码: 4344-4348
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348379
出版商: AIP
数据来源: AIP
摘要:
Lateral degrees of freedom in resonant tunneling heterostructure devices are investigated in a model which omits the usual assumption that the electric field and current density are laterally uniform. Relaxation of spatially nonuniform configurations of field and current into the usual uniform configurations is examined. For certain device parameters and operating conditions, stable nonuniform configurations are found in addition to the conventional uniform configurations. An eigenvalue criterion for stability is established. The possibility of nonuniform configurations with spatially localized oscillation is also discussed.
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