Raman study of an epitaxial GaAs layer on a Si [100] substrate
作者:
Yihe Huang,
Peter Y. Yu,
Marie‐Noelle Charasse,
Yuhua Lo,
Shyh Wang,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 3
页码: 192-194
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98919
出版商: AIP
数据来源: AIP
摘要:
A bevel has been etched in a GaAs epitaxial film grown on a Si substrate, so that the Raman spectrum of the GaAs layers can be measured as a function of distance from the GaAs/Si interface. The amount of strain and disorder in the GaAs film has been estimated from the GaAs longitudinal optical phonon line shape and frequency. Both the strain and the amount of disorder were found to decrease with increase in the distance from the interface.
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