Atomic structure of faceted planes of three-dimensionalInAsislands onGaAs(001)studied by scanning tunneling microscope
作者:
Y. Hasegawa,
H. Kiyama,
Q. K. Xue,
T. Sakurai,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 18
页码: 2265-2267
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121273
出版商: AIP
数据来源: AIP
摘要:
The three-dimensional (3D) island structure was prepared by molecular beam epitaxy for the lattice mismatchedInAs/GaAs(001)system and its images showing atomic structure on faceted planes were takenin situby ultrahigh vacuum scanning tunneling microscopy (STM). The (113), (114), and (215) faceted planes are observed for the 3D islands. Based on the STM images, atomic structural models are proposed for the faceted surfaces. The surface structure of the (113) faceted planes we propose is different from those observed on the flatGaAs(113)surface. ©1998 American Institute of Physics.
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