A SiGe three‐terminal hot‐hole transistor using a double‐barrier resonant tunneling structure as an emitter is fabricated. Injected carriers from the emitter are transferred near‐ballistically into the collector through a thin base. The demonstrated main feature of the device is a controllable negative differential resistance in the collector current. Utilizing the high‐speed characteristics of the tunneling process and negative differential resistance, integration of the device into Si technology could find applications in the areas of high‐speed digital circuits, frequency multipliers, and tunable oscillators/amplifiers.