Epitaxial growth of LiInSe2on {111}Aoriented GaP by a hot wall technique
作者:
K. Kuriyama,
Y. Igarashi,
F. Nakamura,
A. Okada,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 18
页码: 1199-1201
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97010
出版商: AIP
数据来源: AIP
摘要:
LiInSe2films were grown on GaP substrates using a hot wall technique. Reflection high‐energy electron diffraction analysis showed that LiInSe2, having a &bgr;‐NaFeO2(wurtzitelike) structure, grows epitaxially on a 〈111〉Aoriented GaP at substrate temperatures ranging from 360 to 400 °C and at the wall temperature of 650 °C with the compensation of Se. The crystalline quality of the epitaxial layers on substrates was investigated by Rutherford backscattering (RBS). The depth profile of RBS‐aligned spectrum showed the relative low minimum yield of backscattered particles except for that near the interface. Auger electron spectroscopy measurements showed that the atomic concentration ratio of Se and In in films was 2.
点击下载:
PDF
(225KB)
返 回