Simple high-frequency CMOS transconductor
作者:
S.P.Singh,
J.V.Hanson,
J.Vlach,
期刊:
IEE Proceedings G (Circuits, Devices and Systems)
(IET Available online 1990)
卷期:
Volume 137,
issue 6
页码: 470-474
年代: 1990
DOI:10.1049/ip-g-2.1990.0072
出版商: IEE
数据来源: IET
摘要:
A new transconductor, using only two transistors, is presented. It is based on standard inverter configurations and does not need matching ofnMOS andpMOS transistors or of the power supply voltages. Reduction in nonlinearity is achieved by maintaining a zero offset condition. The circuit is not affected by variations in body effect as sources and substrates are connected to fixed voltages. Although the inverter has a low signal level handling capability (≃300mV for a total harmonic distortion of 1%), this can be improved by the use of two inverters. This leads to a larger dynamic range and has no noticeable effect on bandwidth.A wideband integrator is developed, based on the new transconductor, with independent adjustment of quality factor and unity-gain frequency.
点击下载:
PDF
(471KB)
返 回