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Alloyed contacts to susceptor rapid thermal annealed Si‐implanted InP

 

作者: A. Katz,   S. J. Pearton,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 1  

页码: 178-180

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585284

 

出版商: American Vacuum Society

 

关键词: SILICON;GOLD ALLOYS;GERMANIUM ALLOYS;ANNEALING;ION IMPLANTATION;INDIUM PHOSPHIDES;OHMIC CONTACTS;FABRICATION;PERFORMANCE;ELECTRIC CONDUCTIVITY;ELECTRICAL PROPERTIES

 

数据来源: AIP

 

摘要:

The performance of AuGe contacts ton‐type InP layers, formed by implantation of Si into semi‐insulating InP substrates and activated by rapid thermal annealing within an enclosed SiC‐coated graphite susceptor (700 °C, 10 s) was studied. These contacts were purely ohmic with the lowest contact resistivity value of 1×10−7Ω cm2which was measured at the contact to 3×1018cm−3Si‐doped InP substrate after rapid thermal processing at 375 °C for 30 s.

 

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