The ability to grow Si1−xGexthin films on single‐crystal silicon or fused silica substrates by the pulsed excimer laser ablation from a sintered SiGe target is investigated. The stoichiometry of the deposits was found to depend essentially on the Ge enrichment of the ablated target surface. Crystalline layers were obtained for substrate temperatures higher than a threshold value depending on its nature. Finally, surfaces, nearly free from droplets, were achieved by optimizing the laser irradiation conditions. ©1995 American Institute of Physics.