Properties of silicon dioxide films prepared by pulsed‐laser ablation
作者:
A. Slaoui,
E. Fogarassy,
C. Fuchs,
P. Siffert,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 71,
issue 2
页码: 590-596
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.350411
出版商: AIP
数据来源: AIP
摘要:
Silicon dioxide films have been prepared by ArF pulsed‐laser ablation of a silicon monoxide (SiO) target in oxygen atmosphere at various substrate temperatures (20–450 °C). The structural and electrical properties of the SiO2deposited films have been investigated. The experimental results indicate a strong reduction of the porosity and structural defects in the films for increasing values of the deposition temperature. Film properties are also strongly influenced by the application of post rapid thermal (400–1000 °C) treatments in Ar atmosphere. The refractive index of these films increases, whereas we observe a reduction of their relative dielectric constant which is mainly attributed to the diminution of the amount of hydrogen trapped into the laser grown oxide. A minimum oxide charge density of 1.5×1011cm−2with a dielectric breakdown field of 2–8 MV/cm was measured in oxide films deposited at 20 °C and subsequently annealed at 1000 °C by rapid thermal treatment (30 s).
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