Subpicosecond photoluminescence from radiation‐damaged Ga0.47In0.53As
作者:
R. A. Ho¨pfel,
N. Sawaki,
E. Wintner,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 5
页码: 460-462
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101852
出版商: AIP
数据来源: AIP
摘要:
The luminescence of photoexcited carriers far above the band gap of Ga0.47In0.53As is studied with subpicosecond time resolution. In undamaged material the luminescence decays with characteristic times of 2–4 ps in the energy range between 1.9 and 1.4 eV, due to the rapid energy relaxation of electrons and holes far above the band edges. In radiation‐damaged (He+bombarded) material, luminescence decay times as short as 0.9 ps are observed. The luminescence spectra give evidence for extreme nonequilibrium distributions of the photoexcited carriers, caused by the ultrafast recombination, which—in radiation‐damaged samples—is a faster process than energy relaxation.
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