We demonstrate the performance of a semiconductor photorefractivep‐i‐ndiode operating at 1.55 &mgr;m in the longitudinal quantum‐confined Stark geometry. The device structure consists of a semi‐insulating InP–GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in ap‐njunction. In this structure, the measured output diffraction efficiency reaches 0.6%. This value is close to the output diffraction efficiency value estimated from electroabsorption measurements. ©1996 American Institute of Physics.